v rrm = 45 v - 100 v i f(av) = 120 a features ? high surge capability three tower package ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrt12045(r) mbrt12060(r) unit repetitive peak reverse voltage v rrm 45 60 v rms reverse voltage v rms 32 42 v dc blocking voltage v dc 45 60 v silicon power schottk y diode mbrt12045 thru MBRT120100R mbrt120100(r) 80 56 mbrt12080(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) ? types from 45 v to 100 v v rrm conditions 100 70 100 80 dc blocking voltage v dc 45 60 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrt12045(r) mbrt12060(r) unit average forward current (per pkg) i f(av) 120 120 a maximum instantaneous forward voltage (per leg) 0.70 0.75 11 10 10 30 30 thermal characteristics thermal resistance, junction- case (per leg) r jc 0.80 0.80 c/w a t j = 100 c 10 10 maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine electrical characteristics, at tj = 25 c, unless otherwise specified ma v t j = 25 c i fm = 60 a, t j = 25 c conditions -55 to 150 t c = 125 c mbrt12080(r) 0.80 t j = 150 c 0.80 0.84 0.84 30 30 120 120 800 800 800 800 -55 to 150 -55 to 150 100 80 -55 to 150 mbrt120100(r) 11 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrt12045 thru MBRT120100R www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrt12045 thru MBRT120100R www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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